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?2002 fairchild semiconductor corporation april 2002 HGTP14N44G3VL / hgt1s14n44g3vls rev. a, april 2002 HGTP14N44G3VL / hgt1s14n44g3vls HGTP14N44G3VL / hgt1s14n44g3vls 300mj , 440v, n-channel ignition igbt general description this n-channel igbt is a mos gated, logic level device which is in- tended to be used as an ignition coil driver in automotive ignition cir- cuits. unique features include an active voltage clamp between the collector and the gate and esd protection for the logic level gate. some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment. formerly developmental type 49238 applications ? automotive ignition coil driver circuits coil-on plug applications features logic level gate drive internal voltage clamp esd gate protection max t j = 175 o c scis energy = 300mj at t j = 25 o c device maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units bv ces collector to emitter breakdown voltage (i c = 10 ma) 490 v e scis25 drain to source avalanche energy at l = 2.3mhy, t c = 25c 300 mj i c25 collector current continuous, at t c = 25c, v ge = 4.5v 27 a i c90 collector current continuous, at t c = 90c, v ge = 4.5v 21 a v ges gate to emitter voltage continuous 10 v v gem gate to emitter voltage pulsed 12 v i co l = 2.3mhy, t c = 25c 20 a i co l = 2.3mhy, t c = 150c 15 a p d power dissipation total t c = 25c 231 w power dissipation derating t c > 25c 1.54 w/c t j, t stg operating and storage junction temperature range -40 to 175 c t l max lead temp for soldering (leads at 1.6mm from case for 10s) 300 c t pkg max lead temp for soldering (package body for 10s) 260 c esd electrostatic discharge voltage at 100pf, 1500 ? 6kv package jedec to-263ab collector (flange) d2-pak gate collector emitter r 1 symbol collector (flange) g c e jedec to-220ab e g
?2002 fairchild semiconductor corporation HGTP14N44G3VL / hgt1s14n44g3vls rev. a, april 2002 HGTP14N44G3VL / hgt1s14n44g3vls package marking and ordering information electrical characteristics t a = 25 c unless otherwise noted off state characteristics on state characteristics switching characteristics thermal characteristics device marking device package reel size tape width quantity 14n44gv hgt1s14n44g3vlt to-263ab 24mm 24mm 800 units 14n44gv hgt1s14n44g3vls to-263ab tube n/a 50 units 14n44gv HGTP14N44G3VL to-220ab tube n/a 50 units symbol parameter test conditions min typ max units bv ces collector to emitter breakdown voltage i c = 2ma, v ge = 0 t c = -40 c to 175 c 400 - 480 v bv cer collector to emitter breakdown voltage i c = 10ma, r g = 1k ? t c = 150 c 390 - 470 v bv ecs emitter to collector breakdown voltage i c = 1ma t c = 25 c24 - - v bv ges gate to emitter breakdown voltage i ges = 1ma 14 - - v i ces collector to emitter leakage current v ce = 300v, t c = 25 c- - 10 a t c = 150 c - - 250 a i ges gate to emitter leakage current v ge = 10v t c = 25 c- - 5 a r 1 series gate resistance - 1000 - ? v ce(sat) collector to emitter saturation voltage i c = 8a, v ge = 4.5v t c = 25 c- 1.31.9v t c = 150 c- 1.4 2.2 v v ge(th) gate to emitter threshold voltage i c = 1ma, v ce = v ge t c = -40 c- - 2.5 v t c = 150 c0.6 - - v t d(off) current turn-off delay time-inductive load i c = 7.5a, r g = 1k ?, l = 1.0mhy, v cl = 300v, v ge = 5v, t c = 25 c, see fig. 12 3 - 18 s t f current turn-off fall time-inductive load i c = 7.5a, r g = 1k ?, l = 1.0mhy, v cl = 300v, v ge = 5v, t c = 25 c, see fig. 12 3 - 15 s scis self clamped inductive switching l = 2.3mhy, v ge = 5v, see fig. 1 & 2 t c = 25 c20 - - a t c = 150 c15 - - a r jc thermal resistance junction to case - - 0.70 c/w
?2002 fairchild semiconductor corporation HGTP14N44G3VL / hgt1s14n44g3vls rev. a, april 2002 HGTP14N44G3VL / hgt1s14n44g3vls typical performance curves (continued) figure 1. self clamped inductive switching current vs time figure 2. self clamped inductive switching current vs inductance figure 3. collector to emitter on-state voltage vs junction temperature figure 4. collector to emitter on-state voltage vs junction temperature figure 5. collector to emitter current vs collector to emitter on-state voltage figure 6. collector to emitter current vs collector to emitter on-state voltage t clp , time in clamp (s) i scis , inductive switching current (a) 30 10 40 20 0 r g = 1k ? , v ge = 5v, v dd = 14v 200 160 140 0120 40 20 60 80 t j = 25 c t j = 150 c scis curves valid for v clamp voltages of <460v 100 180 30 10 40 20 0 i scis , inductive switching current (a) 010 2468 t j = 25 c t j = 150 c l, inductance (mhy) r g = 1k ? , v ge = 5v, v dd = 14v scis curves valid for v clamp voltages of < 460v 1.25 1.15 1.05 0.95 0.90 25 -25 175 125 75 -50 0 50 100 150 t j , junction temperature ( c) v ce , collector to emitter voltage (v) v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v i ce = 6a 1.00 1.10 1.20 1.6 1.4 1.2 25 -25 175 125 75 -50 0 50 100 150 t j , junction temperature ( c) v ce , collector to emitter voltage (v) v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v i ce = 10a 1.5 1.3 1.1 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 30 0 10 02.0 1.0 3.0 4.0 20 t j = - 40 c v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v 25 5 15 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 02.0 1.0 3.0 4.0 t j = 25 c v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v 30 0 10 20 25 5 15
?2002 fairchild semiconductor corporation HGTP14N44G3VL / hgt1s14n44g3vls rev. a, april 2002 HGTP14N44G3VL / hgt1s14n44g3vls typical performance curves (continued) figure 7. collector to emitter current vs collector to emitter on-state voltage figure 8. transfer characteristics figure 9. dc collector current vs case temperature figure 10. threshold voltage vs junction temperature figure 11. leakage current vs junction temperature figure 12. switching time vs junction temperature i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 30 0 10 02.0 1.0 3.0 4.0 20 t j = 175 c v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v 25 5 15 i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) 2.0 1.0 3.0 4.0 30 15 5 0 25 10 pulse duration = 250s duty cycle < 0.5%, v ce = 5v t j = 25 c t j = 175 c 2.5 1.5 3.5 4.5 t j = -40 c 20 i ce , dc collector current (a) t c case temperature ( c) 25 25 175 125 75 50 100 150 20 15 5 0 v ge = 4.0v 10 175 50 100 2.0 1.8 1.6 1.4 1.0 v ce = v ge v th , threshold voltage (v) t j junction temperature ( c) 150 0 -50 125 75 25 -25 1.2 i ce = 1ma i ces , leakage current (a) t j , junction temperature ( c) 1000 10 10000 100 25 -25 175 125 75 -50 0 50 100 150 v ces = 250v v ecs = 24v v ces = 350v 25 175 125 75 50 100 150 t j , junction temperature ( c) t offl, switching time (s) 13 12 8 i ce = 7.5a, v ge = 5v, r g = 1k ? inductive t off 10 11 9 t off = t delay + t fall
?2002 fairchild semiconductor corporation HGTP14N44G3VL / hgt1s14n44g3vls rev. a, april 2002 HGTP14N44G3VL / hgt1s14n44g3vls test circuit and waveforms figure 13. capacitance vs collector to emitter voltage figure 14. gate charge figure 15. breakdown voltage vs series gate resistance figure 16. normalized transient thermal impedance c, capacitance (pf) v ce , collector to emitter voltage (v) 1500 500 1000 010 5 152025 0 c ies c oes c res frequency = 1 mhz 2500 2000 q g , gate charge (nc) v ge , gate to emitter voltage (v) 0 2 4 0 5 10 15 20 25 35 8 i g(ref) = 1ma, r l = 1.25 ?, t j = 25 c v ce = 6v v ce = 12v 30 8 bv cer , breakdown voltage (v) r g , series gate resistance (k ? ) 460 430 440 10 1000 6000 420 100 450 t j = - 40 c t j = 25 c t j = 175 c i cer = 10ma z thjc , normalized thermal response t 1 , rectangular pulse duration (s) 10 0 10 -2 10 -1 10 -2 10 -3 10 -4 10 -5 10 -1 duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c t 1 t 2 p d 10 -6 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 10 -2
?2002 fairchild semiconductor corporation HGTP14N44G3VL / hgt1s14n44g3vls rev. a, april 2002 HGTP14N44G3VL / hgt1s14n44g3vls figure 17. scis test circuit figure 18. t off switching test circuit figure 19. unclamped energy test circuit figure 20. unclamped energy waveforms g c e v ce l pulse gen dut r g r g + - v ce dut 5v c g e load l t p v ge 0.01 ? l i as + - v ce v dd r g vary t p to obtain required peak i as 0v dut g c e v dd v ce bv ces / r t p i as t av 0
?2002 fairchild semiconductor corporation HGTP14N44G3VL / hgt1s14n44g3vls rev. a, april 2002 HGTP14N44G3VL / hgt1s14n44g3vls spice thermal model rev april 2002 HGTP14N44G3VL / hgt1s14n44g3vls ctherm1 th 6 3.2e-3 ctherm2 6 5 1.7e-2 ctherm3 5 4 2.6e-2 ctherm4 4 3 4.8e-1 ctherm5 3 2 1.8e-1 ctherm6 2 tl 7.2e-1 rtherm1 th 6 6.8e-2 rtherm2 6 5 1.3e-1 rtherm3 5 4 1.0e-1 rtherm4 4 3 6.0e-2 rtherm5 3 2 1.4e-1 rtherm6 2 tl 3.6e-2 saber thermal model saber thermal model HGTP14N44G3VL / hgt1s14n44g3vls template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 3.2e-3 ctherm.ctherm2 6 5 = 1.7e-2 ctherm.ctherm3 5 4 = 2.6e-2 ctherm.ctherm4 4 3 = 4.8e-1 ctherm.ctherm5 3 2 = 1.8e-1 ctherm.ctherm6 2 tl = 7.2e-2 rtherm.rtherm1 th 6 = 6.8e-2 rtherm.rtherm2 6 5 = 1.3e-1 rtherm.rtherm3 5 4 = 1.0e-1 rtherm.rtherm4 4 3 = 6.0e-2 rtherm.rtherm5 3 2 = 1.4e-1 rtherm.rtherm6 2 tl = 3.6e-2 } rtherm4 rtherm6 rtherm5 rtherm3 rtherm2 rtherm1 ctherm4 ctherm6 ctherm5 ctherm3 ctherm2 ctherm1 tl 2 3 4 5 6 th junction case

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